STMicroelectronics and TSMC collaborate to increase GaN product market adoption


Recently, STMicroelectronics (ST), the world's leading semiconductor supplier across multiple electronic applications, and TSMC (TWSE: 2330), the world's largest professional semiconductor foundry, have joined forces to accelerate GaN. Development of process technology and supply of GaN discrete and integrated devices. Through this collaboration, ST's innovative strategic gallium nitride products will use TSMC's industry-leading GaN manufacturing process.

Gallium nitride (GaN) is a wide bandgap semiconductor material. Compared with traditional silicon power semiconductors, it has obvious advantages. For example, it has higher energy efficiency when working at high power, which significantly reduces parasitic power loss. GaN technology can also design more compact devices, giving the target application a better form factor. In addition, the switching speed of gallium nitride devices is 10 times that of silicon devices, and at the same time, the peak operating temperature is higher. These robust and strong material characteristics make gallium nitride very suitable for the growing 100V and 650V automotive, industrial, telecommunications and specific Consumer and other applications.

Specifically, compared to silicon technology based on the same topology, power gallium nitride and gallium nitride IC technology will enable STMicroelectronics to provide customers with better energy-efficient solutions for mid- to high-power applications, including hybrid and electric vehicles Power converter and charger. Power gallium nitride and gallium nitride IC technology will help promote the rapid development of the electrification of passenger cars and commercial vehicles.

Marco Monti, president of ST ’s Automotive and Discrete Devices Division, said: "As a leader in demanding automotive and industrial wide bandgap semiconductor technology and power semiconductors, STMicroelectronics is optimistic about accelerating the development and delivery of gallium nitride process technology. Power GaN and GaN IC products bring to the market a huge opportunity. TSMC is a trusted foundry partner. Only they can meet the unique reliability and development plans of ST's target customers. Requirements. This collaborative project complements our production capacity for the production of power gallium nitride in cooperation with CEA-Leti at the plant in Tours, France. GaN is the next major innovation in power and smart power electronics and process technology. "

"We look forward to working with STMicroelectronics to bring gallium nitride power electronics technology to industrial and automotive power conversion system applications. TSMC leads the industry's gallium nitride manufacturing expertise," said Dr. Kevin Zhang, vice president of business development at TSMC. Combining ST's product design and automotive-grade certification will significantly improve the energy efficiency of industrial and automotive power conversion, make it more energy-efficient and environmentally friendly, and help accelerate the process of electrification of automobiles. "

STMicroelectronics is expected to deliver the first samples of power gallium nitride discrete devices to major customers later this year,